View V23990-P629-L59-PM_8466983.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

V23990-P629-L59-PM preliminary datasheet flowboost 1200v/40a high efficiency dual boost ultra fast switching frequency low inductance layout 1200v igbt and 1200v si diode solar inverter V23990-P629-L59-PM tj=25c, unless otherwise specified parameter symbol value unit repetitive peak reverse voltage v rrm tj=25c 1 600 v t h =80c 3 4 t c =80c 4 0 t h =80c 4 2 t c =80c 6 3 maximum junction temperature t j max 1 50 c boost igbt ( t1 , t2 ) collector-emitter break down voltage v ce tj=25c 1 200 v t h =80c 4 0 t c =80c 4 5 t h =80c 1 13 t c =80c 1 71 gate-emitter peak voltage v ge 20 v t sc t j 1 50c 10 s v cc v ge =15v 8 00 v maximum junction temperature t j max 1 75 c 240 t j =25c t j =t j max t p =10ms si n 180 220 i cpulse features surge forward current p tot power dissipation per diode i 2 t flow0 17mm housing target applications schematic bypass diode ( d7 , d8 ) a types i 2 t-value maximum ratings i fav a 2 s i fsm condition t j =t j max 1 20 t p limited by t j max p ulsed collector current p tot a w a a w t j=tjmax short circuit ratings dc collector current i c dc forward current p ower dissipation per igbt t j =t j max copyright vincotech 1 revision: 1
V23990-P629-L59-PM preliminary datasheet tj=25c, unless otherwise specified parameter symbol value unit maximum ratings condition boost igbt protection diode ( d9 , d10 ) t h =80c 1 0 t c =80c 1 3 t h =80c 2 6 t c =80c 3 9 boost fwd (d1 , d4 ) t h =80c 3 9 t c =80c 5 3 t h =80c 8 9 t c =80c 1 34 thermal properties insulation properties v is t=2s d c voltage 4000 v min 12,7 mm min 12,7 mm t j =25c t j =t j max t p=10ms, sin 180, tj=tjmax tp=10ms, sin 180, tj=25c t j =t j max i fsm surge forward current a v t j =t j max 2 1 w w c maximum junction temperature power dissipation per diode i f dc forward current i f surge forward current v rrm t j max p tot power dissipation p eak repetitive reverse voltage dc forward current i fsm p tot 175 1 50 1200 270 a v a c a peak repetitive reverse voltage t j =25c 1 200 v rrm t j =t j max m aximum junction temperature t j max -40+(tjmax - 25) c storage temperature t stg -40+125 c clearance insulation voltage creepage distance t op operation temperature under switching condition copyright vincotech 2 revision: 1
V23990-P629-L59-PM preliminary datasheet p arameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max tj=25c 0,7 1,15 1,4 tj=125c 1,11 tj=25c 0,92 tj=125c 0,82 tj=25c 0,009 tj=125c 0,012 tj=25c 0,05 tj=125c thermal resistance chip to heatsink per chip r thjh 1,67 thermal resistance chip to case per chip r thjc 1,10 tj=25c 5,2 5,8 6,4 tj=125c tj=25c 1,7 2,10 2,6 tj=125c 2,48 tj=25c 0,25 tj=125c tj=25c 200 tj=125c tj=25c 22 tj=125c 21 tj=25c 35 tj=125c 68 tj=25c 225 tj=125c 293 tj=25c 35 tj=125c 68 tj=25c 1,09 tj=125c 1,82 tj=25c 1,01 tj=125c 1,61 thermal resistance chip to heatsink per chip r thjh 0,84 thermal resistance chip to case per chip r thjc 0,56 tj=25c 0,7 1,66 2,4 tj=125c 1,58 thermal resistance chip to heatsink per chip r thjh 2,72 thermal resistance chip to case per chip r thjc 1,80 tj=25c 1,5 2,28 2,8 tj=125c 2,36 tj=25c 60 tj=125c tj=25c 63 tj=125c 78 tj=25c 83 tj=125c 208 tj=25c 2,25 tj=125c 5,02 tj=25c 0,98 tj=125c 2,42 di(rec)max tj=25c 5304 /dt tj=125c 3201 thermal resistance chip to heatsink per chip r thjh 1,07 thermal resistance chip to case per chip r thjc 0,71 600 700 25 3 700 0,0015 40 24 40 tj=25c 50 1200 rgon=4 thermal grease t h ickness 50um = 1 w/mk 1 5 1 5 rgoff=4 rgon=4 v ce(sat) turn-on delay time gate emitter threshold voltage collector-emitter saturation voltage boost igbt ( t1 , t2 ) gate-emitter leakage current in tegrated gate resistor turn-off energy loss per pulse r gint turn-off delay time e on t d(off) turn-on energy loss per pulse fall time i ges f=1mhz c rss v f q gate thermal grease thickness 50um = 1 w/mk th ermal grease thickness 50um = 1 w/mk v f c ies t d(on) e off t f q rr i ces c oss i rrm i rm e rec reverse recovery time reverse recovered energy forward voltage diode forward voltage input capacitance output capacitance reverse transfer capacitance boost igbt protection diode ( d9 , d10 ) gate charge t rr boost fwd ( d1 , d4 ) value conditions v ge(th) t r collector-emitter cut-off rise time characteristic values forward voltage t hreshold voltage (for power loss calc. only) slope resistance (for power loss calc. only) v f v to r t bypass diode ( d7 , d8 ) 24 25 2 4 k/w v v ma i r reverse current tj=25c v ge =v ce 0 v a mws reverse leakage current peak recovery current peak rate of fall of recovery current reverse recovery charge 0 1200 0 15 20 24 15 1600 thermal grease thickness 50um = 1 w/mk 23 00 135 185 150 none pf a ns v c a/s k/w k/w mws v nc v na ns ma k /w copyright vincotech 3 revision: 1
V23990-P629-L59-PM preliminary datasheet p arameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max v alue co nditions characteristic values f vincotech ntc reference 3964 k 3884 k b-value b(25/100) tol. 1% tj=25c tj=25c b-value b(25/50) % 3,5 +4 ,5 -4,5 21511 mw/k power dissipation p mw 210 rated resistance r power dissipation constant deviation of r25 r/r r100=1486 thermistor tj=25c tj =25c tc=100c tj=25c copyright vincotech 4 revision: 1
V23990-P629-L59-PM preliminary datasheet figure 1 boost igbt protection diode figure 2 boost igbt protection diode typical fwd forward current as di ode transient thermal impedance a function of forward voltage as a function of pulse width i f = f(v f ) z thjh = f(t p ) a t at t p = 2 50 s d = tp / t r thjh = 2 ,72 k/w figure 3 bo ost igbt protection diode figure 4 boost igbt protection diode power dissipation as a for ward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i f = f(t h ) a t at t j = 1 50 oc t j = 1 50 oc boost igbt protection diode 0 5 10 15 20 0 1 2 3 4 v f (v) i f (a) t j = 25c t j = t jmax -25c t p (s) z thjc (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 0 15 30 45 60 0 50 100 150 200 th ( o c) p tot (w) 0 5 10 15 20 0 50 100 150 200 th ( o c) i f (a) copyright vincotech 5 revision: 1
V23990-P629-L59-PM preliminary datasheet figure 3 boost igbt figure 4 boost fwd typical output characteristics ty pical output characteristics i c = f(v ce ) i c = f(v ce ) a t at t p = 2 50 s t p = 2 50 s t j = 2 5 c t j = 1 25 c v gs from 7 v to 17 v in steps of 1 v v gs from 7 v to 17 v in steps of 1 v figure 3 bo ost igbt figure 4 boost fwd typical transfer characteristics ty pical fwd forward current as i c = f(v ge ) a function of forward voltage i f = f(v f ) a t at t p = 2 50 s t p = 2 50 s v ds = 1 0 v input boost 0 30 60 90 120 150 0 1 2 3 4 5 6 v f (v) i f (a) t j = 25c t j = t jmax -25c 0 10 20 30 40 0 2 4 6 8 10 12 v ge (v) i c (a) t j = 25c t j = t jmax -25c 0 30 60 90 120 0 1 2 3 4 5 v ce (v) i c (a) 0 30 60 90 120 0 1 2 3 4 5 v ce (v) i c (a) copyright vincotech 6 revision: 1
V23990-P629-L59-PM preliminary datasheet figure 5 boost igbt figure 6 boost igbt typical switching energy losses ty pical switching energy losses as a function of collector current as a function of gate resistor e = f(i c ) e = f(r g ) w ith an inductive load at with an inductive load at t j = 2 5/125 c t j = 2 5/125 c v ds = 7 00 v v ds = 7 00 v v gs = 1 5 v v gs = 1 5 v r gon = 4 i d = 2 4 a r goff = 4 fi gure 7 bo ost igbt figure 8 boost igbt typical reverse recovery energy loss ty pical reverse recovery energy loss as a function of collector (drain) current as a function of gate resistor e rec = f(i c ) e rec = f(r g ) w ith an inductive load at with an inductive load at t j = 2 5/125 c t j = 2 5/125 c v ds = 7 00 v v ds = 7 00 v v gs = 1 5 v v gs = 1 5 v r gon = 4 i d = 2 4 a input boost e rec high t e rec low t 0 1 2 3 4 5 0 20 40 60 80 i c (a) e (mws) e rec high t e rec low t 0 1 2 3 4 5 0 16 32 48 64 80 r g ( w ww w ) e (mws) e off high t e on high t e on low t e off low t 0 2 4 6 8 0 20 40 60 80 i c (a) e (mws) e off high t e on high t e on low t e off low t 0 2 4 6 8 0 16 32 48 64 80 r g ( w ww w ) e (mws) copyright vincotech 7 revision: 1
V23990-P629-L59-PM preliminary datasheet figure 9 boost igbt figure 10 boost igbt typical switching times as a ty pical switching times as a function of collector current function of gate resistor t = f(i c ) t = f(r g ) w ith an inductive load at with an inductive load at t j = 1 25 c t j = 1 25 c v ds = 7 00 v v ds = 7 00 v v gs = 1 5 v v gs = 1 5 v r gon = 4 i c = 2 4 a r goff = 4 fi gure 11 bo ost fwd figure 12 boost fwd typical reverse recovery time as a ty pical reverse recovery time as a function of collector current function of igbt turn on gate resistor t rr = f(i c ) t rr = f(r gon ) a t at t j = 2 5/125 c t j = 2 5/125 c v ce = 7 00 v v r = 7 00 v v ge = 1 5 v i f = 2 4 a r gon = 4 v gs = 1 5 v input boost t doff t don t r 0,001 0 ,01 0,1 1 10 0 20 40 60 80 i c (a) t ( m s) t f t doff t f t don t r 0,001 0 ,01 0,1 1 10 0 16 32 48 64 80 r g ( w ww w ) t ( m s) t rr high t t rr low t 0,0 0 ,1 0,2 0,3 0,4 0,5 0,6 0 16 32 48 64 80 r gon ( w ww w ) t rr ( m s) t rr high t t rr low t 0 0 ,1 0,2 0,3 0,4 0,5 0,6 0 20 40 60 80 i c (a) t rr ( m s) copyright vincotech 8 revision: 1
V23990-P629-L59-PM preliminary datasheet figure 13 boost fwd figure 14 boost fwd typical reverse recovery charge as a ty pical reverse recovery charge as a function of collector current function of igbt turn on gate resistor q rr = f(i c ) q rr = f(r gon ) a t at at t j = 2 5/125 c t j = 2 5/125 c v ce = 7 00 v v r = 700 v v ge = 1 5 v i f = 24 a r gon = 4 v gs = 15 v fi gure 15 bo ost fwd figure 16 boost fwd typical reverse recovery current as a ty pical reverse recovery current as a function of collector current function of igbt turn on gate resistor i rrm = f(i c ) i rrm = f(r gon ) a t at t j = 2 5/125 c t j = 2 5/125 c v ce = 7 00 v v r = 7 00 v v ge = 1 5 v i f = 2 4 a r gon = 4 v gs = 1 5 v input boost i rrm high t i rrm low t 0 2 0 40 60 80 100 0 16 32 48 64 80 r gon ( w ww w ) i rrm (a) q rr high t q rr low t 0 2 4 6 8 1 0 0 16 32 48 64 80 r gon ( w ) q rr ( m c) i rrm high t i rrm low t 0 2 0 40 60 80 100 0 20 40 60 80 i c (a) i rrm (a) q rr high t q rr low t 0 2 4 6 8 1 0 0 20 40 60 80 i c (a) q rr ( m c) copyright vincotech 9 revision: 1
V23990-P629-L59-PM preliminary datasheet figure 17 boost fwd figure 18 boost fwd typical rate of fall of forward ty pical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of igbt turn on gate resistor di 0 /dt,di rec /dt = f(ic) d i 0 /dt,di rec /dt = f(r gon ) a t at t j = 2 5/125 c tj = 25/125 c v ce = 7 00 v v r = 700 v v ge = 1 5 v i f = 24 a r gon = 4 v gs = 15 v fi gure 19 bo ost igbt figure 20 boost fwd igbt/mosfet transient thermal impedance fwd transient thermal impedance as a function of pulse width as a function of pulse width z thjh = f(t p ) z thjh = f(t p ) a t at d = t p / t d = t p / t r thjh = 0 ,84 k/w r thjh = 1 ,07 k/w igbt thermal model values fwd thermal model values r (c/w) tau (s) r (c/w) tau (s) 0,107 1,413 0,027 8,145 0,391 0,188 0,098 1,332 0,223 0,056 0,284 0,228 0,092 0,011 0,405 0,069 0,030 0,001 0,171 0,014 input boost 0 2000 4000 6000 8000 0 16 32 48 64 80 r gon ( w ) di rec / dt (a/ m s) di 0 /dt d i rec /dt t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 0 2000 4000 6000 8000 0 20 40 60 80 i c (a) di rec / dt (a/ m s) di 0 /dt d i rec /dt copyright vincotech 10 revision: 1
V23990-P629-L59-PM preliminary datasheet figure 21 boost igbt figure 22 boost igbt power dissipation as a col lector/drain current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i c = f(t h ) a t at t j = 1 75 oc t j = 1 75 oc v gs = 1 5 v figure 23 bo ost fwd figure 24 boost fwd power dissipation as a for ward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i f = f(t h ) a t at t j = 1 75 oc t j = 1 75 oc input boost 0 50 100 150 200 250 0 50 100 150 200 th ( o c) p tot (w) 0 10 20 30 40 50 0 50 100 150 200 th ( o c) i c (a) 0 50 100 150 200 0 50 100 150 200 t h ( o c) p tot (w) 0 10 20 30 40 50 60 70 0 50 100 150 200 t h ( o c) i f (a) copyright vincotech 11 revision: 1
V23990-P629-L59-PM preliminary datasheet figure 25 boost igbt figure 26 boost igbt safe operating area as a function ga te voltage vs gate charge of drain-source voltage i c = f(v ce ) v ge = f(qg) a t at d = single pulse i d = 2 4 a t h = 8 0 oc v gs = 1 5 v t j = t jmax oc input boost v ce (v) i c (a) 10 3 10 0 10 1 10 1 10 2 10 3 10us 100us 1ms 10ms 100ms dc 10 2 1 0 2 4 6 8 10 12 14 16 18 0 50 100 150 200 250 qg (nc) v ge (v) 240v 960v copyright vincotech 12 revision: 1
V23990-P629-L59-PM preliminary datasheet figure 1 bypass diode figure 2 bypass diode typical diode forward current as di ode transient thermal impedance a function of forward voltage as a function of pulse width i f = f(v f ) z thjh = f(t p ) a t at t p = 2 50 s d = t p / t r thjh = 1 ,674 k/w figure 3 by pass diode figure 4 bypass diode power dissipation as a for ward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i f = f(t h ) a t at t j = 1 50 oc t j = 1 50 oc bypass diode 0 5 10 15 20 25 30 35 0 0,3 0,6 0,9 1,2 1,5 v f (v) i f (a) t j = 25c t j = t jmax -25c t p (s) z thjc (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 0 20 40 60 80 100 0 50 100 150 200 t h ( o c) p tot (w) 0 10 20 30 40 50 0 50 100 150 200 t h ( o c) i f (a) copyright vincotech 13 revision: 1
V23990-P629-L59-PM preliminary datasheet figure 1 thermistor typical ntc characteristic as a function of temperature r t = f(t) thermistor ntc-typical temperature characteristic 0 5 000 10000 15000 20000 25000 25 50 75 100 125 t (c) r/ copyright vincotech 14 revision: 1
V23990-P629-L59-PM preliminary datasheet t j 125 c r gon 4 r goff 4 fi gure 1 bo ost igbt figure 2 boost igbt turn-off switching waveforms & definition of t doff , t eoff turn-on switching waveforms & definition of t don , t eon (t eoff = integrating time for e off ) (t eon = integrating time for e on ) v ge (0%) = 0 v v ge (0%) = 0 v v ge (100%) = 1 5 v v ge (100%) = 1 5 v v c (100%) = 7 00 v v c (100%) = 7 00 v i c (100%) = 2 4 a i c (100%) = 2 4 a t doff = 0 ,29 s t don = 0 ,02 s t eoff = 0 ,42 s t eon = 0 ,14 s figure 3 bo ost igbt figure 4 boost igbt turn-off switching waveforms & definition of t f turn-on switching waveforms & definition of t r v c (100%) = 7 00 v v c (100%) = 7 00 v i c (100%) = 2 4 a i c (100%) = 2 4 a t f = 0 ,06 s t r = 0 ,01 s switching definitions boost igbt general conditions = = = i c 1% v ce 90% v ge 90% -25 0 2 5 50 75 100 125 -0,2 0 0,2 0,4 0,6 0,8 time (us) % t doff t eoff v ce i c v ge i c 10% v ge10% t don v ce 3% -100 0 1 00 200 300 400 500 2,95 3 3,05 3,1 3,15 3,2 time(us) % i c v ce t eon v ge fitted i c 10% i c 90% i c 60% i c 40% -25 0 2 5 50 75 100 125 0,1 0,2 0,3 0,4 time (us) % v ce i c t f i c10% i c 90% -100 0 1 00 200 300 400 500 3 3,025 3,05 3,075 3,1 time(us) % t r v ce i c copyright vincotech 1 5 revision: 1
V23990-P629-L59-PM preliminary datasheet figure 5 boost igbt figure 6 boost igbt turn-off switching waveforms & definition of t eoff turn-on switching waveforms & definition of t eon p off (100%) = 1 6,97 kw p on (100%) = 1 6,97 kw e off (100%) = 1 ,55 mj e on (100%) = 1 ,85 mj t eoff = 0 ,42 s t eon = 0 ,14 s figure 7 bo ost igbt figure 8 boost fwd gate voltage vs gate charge (measured) tur n-off switching waveforms & definition of t rr v geoff = 0 v v d (100%) = 7 00 v v geon = 1 5 v i d (100%) = 2 4 a v c (100%) = 7 00 v i rrm (100%) = - 76 a i c (100%) = 2 4 a t rr = 0 ,21 s q g = 1 44,01 nc switching definitions boost igbt i c 1% v ge 90% -20 0 2 0 40 60 80 100 120 -0,2 0 0,2 0,4 0,6 time (us) % p off e off t eoff v ce 3% v ge 10% -50 0 5 0 100 150 200 250 300 350 2,95 3 3,05 3,1 3,15 3,2 time(us) % p on e on t eon -5 0 5 10 15 20 -50 0 50 100 150 qg (nc) v ge (v) i rrm 10% i rrm 90% i rrm 100% t rr -400 - 300 -200 -100 0 100 200 2,95 3,1 3,25 3,4 time(us) % i d v d fitted copyright vincotech 1 6 revision: 1
V23990-P629-L59-PM preliminary datasheet figure 9 boost fwd figure 10 boost fwd turn-on switching waveforms & definition of t qrr turn-on switching waveforms & definition of t erec (t qrr = integrating time for q rr ) (t erec = integrating time for e rec ) i d (100%) = 2 4 a p rec (100%) = 1 6,97 kw q rr (100%) = 4 ,94 c e rec (100%) = 2 ,36 mj t qrr = 0 ,43 s t erec = 0 ,43 s switching definitions boost fwd t qrr -400 - 300 -200 -100 0 100 200 2,95 3,1 3,25 3,4 3,55 time(us) % i d q rr -25 0 25 50 75 100 125 150 2,95 3,1 3,25 3,4 3,55 time(us) % p rec e rec t erec copyright vincotech 1 7 revision: 1
V23990-P629-L59-PM preliminary datasheet version ordering code in datamatrix as in packaging barcode as without thermal paste 17mm housing V23990-P629-L59-PM p629-l59-pm p629-l59-pm outline pinout ordering code & marking ordering code and marking - outline - pinout copyright vincotech 18 revision: 1
V23990-P629-L59-PM preliminary datasheet product status definitions formative or in design first production full production disclaimer life support policy as used herein: the information given in this datasheet describes the type of component and does not represent assured characteristics. for tested values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. target product status datasheet status definition this datasheet contains the design specifications for product development. specifications may change in any manner without notice. the data contained is exclusively intended for technically trained staff. preliminary this datasheet contains preliminary data, and supplementary data may be published at a later date. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. final this datasheet contains final specifications. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. copyright vincotech 19 revision: 1

▲Up To Search▲

Price & Availability of V23990-P629-L59-PM

	To Download V23990-P629-L59-PM Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .